Following the PhantomStrike radar using GaN transistors for smaller aircraft, Raytheon plans to carry the GaN technology to F-15EX fighters with APG-82(V)X.
Raytheon will leverage the know-how and technical capabilities gained on GaN radars from PhantomStrike to develop the APG-82(V)X radar for F-15EX fighters, which are set to be the workhorses in the USAF’s combatant fleet.
Compared to the current APG-82V(1) using GaAs transistors, APG-82(V)X will primarily offer a longer range thanks to the use of GaN transistors. GaN transistors primarily offer operation at higher temperatures and voltages than their GaAs counterparts. The higher energy density will also contribute to the onboard electronic warfare capabilities through the potential for higher outputs when it comes to jamming.
The US is planning a similar radar upgrade for the F-35 fighters through the Block 4 standard to introduce the APG-85 as APG-81’s replacement.
The longer range provided by GaN-based AESA radars can be partly credited to the aforementioned tolerance for energy input. Aside from allowing radars of the same size to achieve better performance, the technology also enables more compact radars of the same performance. Raytheon’s PhantomStrike AESA radar, meant for the FA-50 Block 20 LCA, CCAs and other platforms that are constrained in terms of power generation, can be given as an example to the latter case.
Author: Kaan Azman
Editor: Özgür Ekşi
